Specifications

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Product Details

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Select all	Attribute	Value
	Brand	Cypress Semiconductor
	Memory Size	1Gbit
	Organisation	2048k x 64 bit
	Number of Words	2048k
	Number of Bits per Word	64bit
	Address Bus Width	8bit
	Timing Type	Asynchronous
	Mounting Type	Surface Mount
	Package Type	BGA
	Pin Count	63
	Dimensions	11 x 9 x 1mm
	Height	1mm
	Maximum Operating Supply Voltage	3.6 V
	Maximum Operating Temperature	+85 °C
	Length	11mm
	Minimum Operating Supply Voltage	2.7 V
	Minimum Operating Temperature	-40 °C
	Width	9mm

	Select all
	Brand Cypress Semiconductor
	Memory Size 1Gbit
	Organisation 2048k x 64 bit
	Number of Words 2048k
	Number of Bits per Word 64bit
	Address Bus Width 8bit
	Timing Type Asynchronous
	Mounting Type Surface Mount
	Package Type BGA
	Pin Count 63
	Dimensions 11 x 9 x 1mm
	Height 1mm
	Maximum Operating Supply Voltage 3.6 V
	Maximum Operating Temperature +85 °C
	Length 11mm
	Minimum Operating Supply Voltage 2.7 V
	Minimum Operating Temperature -40 °C
	Width 9mm

Datasheet S34ML01G200BHI000

The S34ML01G2, S34ML02G2, and S34ML04G2 series is offered with a 3.3-V VCC power supply, and with x8 or x16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for x8 is (2048 +spare) bytes, for x16 (1024 + spare) words.

Cypress Semiconductor SRAM Memory Chip, S34ML01G200BHI000- 1Gbit