- RS Stock No.:
- 188-2651P
- Mfr. Part No.:
- W949D2DBJX5I
- Brand:
- Winbond
60 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (Supplied in a Tray)
$5.784
(exc. GST)
$6.362
(inc. GST)
Units | Per unit |
60 - 115 | $5.784 |
120 + | $5.676 |
- RS Stock No.:
- 188-2651P
- Mfr. Part No.:
- W949D2DBJX5I
- Brand:
- Winbond
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- TW
Product Details
VDD = 1.7∼1.95V
VDDQ = 1.7∼1.95V
Data width: x16 / x32
Clock rate: 200MHz (-5),166MHz (-6)
Standard Self Refresh Mode
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self Refresh (ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and CK)
Bidirectional, data strobe (DQS)
CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
8K refresh cycles/64 mS
Interface: LVCMOS compatible
Support package:
60 balls VFBGA (x16)
90 balls VFBGA (x32)
Operating Temperature Range
Extended: -25°C ≤ TCASE ≤ 85°C
Industrial: -40°C ≤ TCASE ≤ 85°C
VDDQ = 1.7∼1.95V
Data width: x16 / x32
Clock rate: 200MHz (-5),166MHz (-6)
Standard Self Refresh Mode
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self Refresh (ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and CK)
Bidirectional, data strobe (DQS)
CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
8K refresh cycles/64 mS
Interface: LVCMOS compatible
Support package:
60 balls VFBGA (x16)
90 balls VFBGA (x32)
Operating Temperature Range
Extended: -25°C ≤ TCASE ≤ 85°C
Industrial: -40°C ≤ TCASE ≤ 85°C
This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.
Burst Type: Sequential or Interleave
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Memory Size | 512Mbit |
Organisation | 64M x 8 bit |
SDRAM Class | LPDDR |
Data Rate | 200MHz |
Data Bus Width | 32bit |
Address Bus Width | 15bit |
Number of Bits per Word | 8bit |
Maximum Random Access Time | 5ns |
Number of Words | 64M |
Mounting Type | Surface Mount |
Package Type | VFBGA |
Pin Count | 90 |
Dimensions | 13.1 x 8.1 x 0.65mm |
Height | 0.65mm |
Length | 13.1mm |
Maximum Operating Temperature | +85 °C |
Maximum Operating Supply Voltage | 1.95 V |
Width | 8.1mm |
Minimum Operating Temperature | -40 °C |
Minimum Operating Supply Voltage | 1.7 V |
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