Taiwan Semiconductor 70 V 70 mA Diode Schottky 3-Pin SOT-23
- RS Stock No.:
- 687-2779P
- Mfr. Part No.:
- BAS70-04 RF
- Brand:
- Taiwan Semiconductor
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View bulk pricing optionsSubtotal 800 units (supplied on a reel)*
$120.00
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$128.00
(inc. GST)
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In Stock
- 8,200 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 800 - 1400 | $0.15 |
| 1500 + | $0.148 |
*price indicative
- RS Stock No.:
- 687-2779P
- Mfr. Part No.:
- BAS70-04 RF
- Brand:
- Taiwan Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | SOT-23 | |
| Maximum Continuous Forward Current If | 70mA | |
| Peak Reverse Repetitive Voltage Vrrm | 70V | |
| Diode Configuration | Series | |
| Series | BAS70 | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 100nA | |
| Maximum Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Peak Reverse Recovery Time trr | 5ns | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 3.05mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type SOT-23 | ||
Maximum Continuous Forward Current If 70mA | ||
Peak Reverse Repetitive Voltage Vrrm 70V | ||
Diode Configuration Series | ||
Series BAS70 | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 100nA | ||
Maximum Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Peak Reverse Recovery Time trr 5ns | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 3.05mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
Schottky Barrier Diodes, up to 1A, Taiwan Semiconductor
Low power loss
Low foward voltage drop
High current capability