Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Mounting Type	Surface Mount
	Package Type	D2PAK
	Maximum Continuous Forward Current	32A
	Peak Reverse Repetitive Voltage	1200V
	Diode Configuration	Single
	Diode Type	Schottky
	Pin Count	3
	Number of Elements per Chip	1
	Diode Technology	Schottky
	Peak Non-Repetitive Forward Surge Current	1.19kA

	Select all
	Brand onsemi
	Mounting Type Surface Mount
	Package Type D2PAK
	Maximum Continuous Forward Current 32A
	Peak Reverse Repetitive Voltage 1200V
	Diode Configuration Single
	Diode Type Schottky
	Pin Count 3
	Number of Elements per Chip 1
	Diode Technology Schottky
	Peak Non-Repetitive Forward Surge Current 1.19kA

Datasheet FFSB20120A-F085

Non Compliant

COO (Country of Origin):: CN

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175°C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
PPAP Capable
Applications
Automotive HEV−EV Onboard Chargers
Automotive HEV−EV DC−DC Converters

onsemi 1200V 32A, Schottky Diode, 3-Pin D2PAK FFSB20120A-F085