onsemi 1200V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH20120A-F085

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Packaging Options:
RS Stock No.:
178-4483P
Mfr. Part No.:
FFSH20120A-F085
Brand:
onsemi
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Brand

onsemi

Mounting Type

Through Hole

Package Type

TO-247

Maximum Continuous Forward Current

30A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2

Number of Elements per Chip

1

Diode Technology

Schottky

Peak Non-Repetitive Forward Surge Current

1.19kA

COO (Country of Origin):
CN
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery

Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers