Cypress Semiconductor 1Mbit 25ns NVRAM, 8-Pin SOIC, CY14B101J2-SXI
- RS Stock No.:
- 194-9055
- Mfr. Part No.:
- CY14B101J2-SXI
- Brand:
- Cypress Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 194-9055
- Mfr. Part No.:
- CY14B101J2-SXI
- Brand:
- Cypress Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 1Mbit | |
| Organisation | 128K x 8 bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 25ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.47mm | |
| Length | 4.97mm | |
| Width | 3.98mm | |
| Height | 1.47mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 128K | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 1Mbit | ||
Organisation 128K x 8 bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 25ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.47mm | ||
Length 4.97mm | ||
Width 3.98mm | ||
Height 1.47mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 128K | ||
The Cypress CY14C101J/CY14B101J/CY14E101J combines a 1-Mbit nvSRAM[2] with a nonvolatile element in each memory cell. The memory is organized as 128K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down (except for CY14X101J1). On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). The STORE and RECALL operations can also be initiated by the user through I 2C commands.
