onsemi P-Channel MOSFET, 2 A, 12 V, 3-Pin SC-70FL MCH3382-TL-W
- RS Stock No.:
- 922-9474P
- Mfr. Part No.:
- MCH3382-TL-W
- Brand:
- onsemi
Bulk discount available
Subtotal 250 units (supplied on a reel)*
$44.25
(exc. GST)
$48.75
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 250 - 950 | $0.177 |
| 1000 - 2450 | $0.163 |
| 2500 - 4950 | $0.152 |
| 5000 + | $0.141 |
*price indicative
- RS Stock No.:
- 922-9474P
- Mfr. Part No.:
- MCH3382-TL-W
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SC-70FL | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 198 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 800 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -9 V, +9 V | |
| Length | 2mm | |
| Width | 1.6mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 2.3 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.83mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SC-70FL | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 198 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 800 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -9 V, +9 V | ||
Length 2mm | ||
Width 1.6mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Height 0.83mm | ||