Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module Wolfspeed CCS020M12CM2

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Unavailable
RS will no longer stock this product.
RS Stock No.:
916-3888
Mfr. Part No.:
CCS020M12CM2
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

1200 V

Package Type

Module

Mounting Type

Screw Mount

Pin Count

28

Maximum Drain Source Resistance

208 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

167 W

Transistor Configuration

3 Phase

Maximum Gate Source Voltage

-10 V, +25 V

Number of Elements per Chip

6

Typical Gate Charge @ Vgs

61.5 nC @ 20 V, 61.5 nC @ 5 V

Length

108mm

Maximum Operating Temperature

+150 °C

Width

47mm

Transistor Material

SiC

Height

17mm

Forward Diode Voltage

2.3V

Minimum Operating Temperature

-40 °C

Wolfspeed Silicon Carbide Power MOSFET Modules


Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



MOSFET Transistors, Wolfspeed