SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J

RS Stock No.:: 915-8830
Mfr. Part No.:: C3M0065090J
Brand:: Wolfspeed

SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J

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Added

Price (ex. GST) Each

$26.39

(exc. GST)

$29.03

(inc. GST)

Units	Per unit
1 - 12	$26.39
13 - 24	$25.77
25 +	$25.36

RS Stock No.:: 915-8830
Mfr. Part No.:: C3M0065090J
Brand:: Wolfspeed

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Voltage	900 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	78 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.1V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	113 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+25 V
Transistor Material	SiC
Width	10.99mm
Length	10.23mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	30 nC @ 15 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	4.4V
Height	4.57mm