N-Channel MOSFET, 37 A, 600 V, 3-Pin TO-247 onsemi FCH104N60F

RS Stock No.:: 865-1280
Mfr. Part No.:: FCH104N60F
Brand:: onsemi

N-Channel MOSFET, 37 A, 600 V, 3-Pin TO-247 onsemi FCH104N60F

74 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 2)

$10.465

(exc. GST)

$11.511

(inc. GST)

Units	Per unit	Per Pack*
2 - 6	$10.465	$20.93
8 - 14	$10.215	$20.43
16 +	$10.06	$20.12

*price indicative

RS Stock No.:: 865-1280
Mfr. Part No.:: FCH104N60F
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	37 A
Maximum Drain Source Voltage	600 V
Package Type	TO-247
Series	SuperFET II
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	104 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	357 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.82mm
Typical Gate Charge @ Vgs	107 nC @ 10 V
Length	15.87mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	20.82mm