N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

RS Stock No.:: 827-4919P
Mfr. Part No.:: CSD19536KCS
Brand:: Texas Instruments

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

38 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (Supplied in a Tube)

$7.325

(exc. GST)

$8.057

(inc. GST)

Units	Per unit
2 +	$7.325

RS Stock No.:: 827-4919P
Mfr. Part No.:: CSD19536KCS
Brand:: Texas Instruments

ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	259 A
Maximum Drain Source Voltage	100 V
Series	NexFET
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.2V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	10.67mm
Typical Gate Charge @ Vgs	118 nC @ 10 V
Number of Elements per Chip	1
Width	4.7mm
Height	16.51mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

N-Channel NexFET™ Power MOSFET, Texas Instruments