N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3
- RS Stock No.:
- 827-4836P
- Mfr. Part No.:
- CSD17308Q3
- Brand:
- Texas Instruments
This image is representative of the product range
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
$64.05
(exc. GST)
$70.45
(inc. GST)
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Units | Per unit |
|---|---|
| 50 - 90 | $1.281 |
| 100 - 240 | $1.241 |
| 250 - 490 | $1.214 |
| 500 + | $1.188 |
*price indicative
- RS Stock No.:
- 827-4836P
- Mfr. Part No.:
- CSD17308Q3
- Brand:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 47 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 16.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.8V | |
| Minimum Gate Threshold Voltage | 0.9V | |
| Maximum Power Dissipation | 2.7 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +10 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 3.9 nC @ 4.5 V | |
| Length | 3.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.4mm | |
| Number of Elements per Chip | 1 | |
| Series | NexFET | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 47 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 16.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.8V | ||
Minimum Gate Threshold Voltage 0.9V | ||
Maximum Power Dissipation 2.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +10 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 3.9 nC @ 4.5 V | ||
Length 3.4mm | ||
Maximum Operating Temperature +150 °C | ||
Width 3.4mm | ||
Number of Elements per Chip 1 | ||
Series NexFET | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
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