N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC035N04LSGATMA1
- RS Stock No.:
- 825-9152P
- Mfr. Part No.:
- BSC035N04LSGATMA1
- Brand:
- Infineon
Subtotal (63 reels of 20 units)**. Quantities below 150 on continuous strip
$2,167.20
(exc. GST)
$2,381.40
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit |
|---|---|
| 1260 - 2480 | $1.677 |
| 2500 + | $1.65 |
**price indicative
- RS Stock No.:
- 825-9152P
- Mfr. Part No.:
- BSC035N04LSGATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 69 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 5.35mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.35mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 40 V | ||
Series OptiMOS™ 3 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5.35mm | ||
Maximum Operating Temperature +150 °C | ||
Width 6.35mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||