onsemi N-Channel MOSFET, 220 A, 60 V, 3-Pin D2PAK NVB5860NT4G
- RS Stock No.:
- 823-4157P
- Mfr. Part No.:
- NVB5860NT4G
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
$100.55
(exc. GST)
$110.60
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 25 - 95 | $4.022 |
| 100 - 245 | $3.676 |
| 250 - 495 | $3.312 |
| 500 + | $2.982 |
*price indicative
- RS Stock No.:
- 823-4157P
- Mfr. Part No.:
- NVB5860NT4G
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 220 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 283 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.29mm | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 220 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 283 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.29mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Width 9.65mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||