N-Channel MOSFET, 670 mA, 190 V, 6-Pin SC-75 Vishay SIB452DK-T1-GE3

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Subtotal 40 units (supplied on a continuous strip)*

$45.60

(exc. GST)

$50.00

(inc. GST)

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Units
Per unit
40 - 180$1.14
200 - 380$1.13
400 - 780$1.118
800 +$1.107

*price indicative

Packaging Options:
RS Stock No.:
814-1253P
Mfr. Part No.:
SIB452DK-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

670 mA

Maximum Drain Source Voltage

190 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

13 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

1.7mm

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Length

1.7mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.8mm

COO (Country of Origin):
CN