N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXYS IXFN132N50P3
- RS Stock No.:
- 804-7599
- Mfr. Part No.:
- IXFN132N50P3
- Brand:
- IXYS
17 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$59.08
(exc. GST)
$64.99
(inc. GST)
| Units | Per unit |
| 1 - 2 | $59.08 |
| 3 - 4 | $58.47 |
| 5 + | $57.40 |
- RS Stock No.:
- 804-7599
- Mfr. Part No.:
- IXFN132N50P3
- Brand:
- IXYS
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 112 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | SOT-227B |
| Series | HiperFET, Polar3 |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 39 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.5 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 25.07mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 38.23mm |
| Typical Gate Charge @ Vgs | 250 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Height | 9.6mm |
| Minimum Operating Temperature | -55 °C |