- RS Stock No.:
- 804-7596
- Mfr. Part No.:
- IXFN110N60P3
- Brand:
- IXYS
On back order for despatch 11/12/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each
$58.29
(exc. GST)
$64.12
(inc. GST)
Units | Per unit |
1 - 2 | $58.29 |
3 - 4 | $58.10 |
5 + | $57.65 |
- RS Stock No.:
- 804-7596
- Mfr. Part No.:
- IXFN110N60P3
- Brand:
- IXYS
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 90 A |
Maximum Drain Source Voltage | 600 V |
Package Type | SOT-227B |
Series | HiperFET, Polar3 |
Mounting Type | Screw Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 56 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 1.5 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Length | 38.23mm |
Typical Gate Charge @ Vgs | 245 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Width | 25.07mm |
Height | 9.6mm |
Minimum Operating Temperature | -55 °C |
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