MPN

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-523 Vishay SI1026X-T1-GE3

RS Stock No.:: 787-9046P
Mfr. Part No.:: SI1026X-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-523 Vishay SI1026X-T1-GE3

This image is representative of the product range

Unavailable

RS will no longer stock this product.

RS Stock No.:: 787-9046P
Mfr. Part No.:: SI1026X-T1-GE3
Brand:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Maximum Continuous Drain Current	300 mA
	Maximum Drain Source Voltage	60 V
	Package Type	SOT-523 (SC-89)
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	2.5 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	250 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	600 nC @ 4.5 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Length	1.7mm
	Width	1.7mm
	Minimum Operating Temperature	-55 °C
	Height	0.6mm

	Select all
	Brand Vishay
	Channel Type N
	Maximum Continuous Drain Current 300 mA
	Maximum Drain Source Voltage 60 V
	Package Type SOT-523 (SC-89)
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 2.5 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 250 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 600 nC @ 4.5 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Length 1.7mm
	Width 1.7mm
	Minimum Operating Temperature -55 °C
	Height 0.6mm

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor