Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal 640 units (supplied on a reel)*

$560.00

(exc. GST)

$615.68

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 4,280 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
640 +$0.875

*price indicative

Packaging Options:
RS Stock No.:
787-9020P
Mfr. Part No.:
SI4532CDY-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6nC

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

2.78W

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Length

5mm

Height

1.5mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor