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N-Channel MOSFET, 19.5 A, 600 V, 3-Pin D2PAK STMicroelectronics STB23NM60ND

RS Stock No.:: 761-0667
Mfr. Part No.:: STB23NM60ND
Brand:: STMicroelectronics

N-Channel MOSFET, 19.5 A, 600 V, 3-Pin D2PAK STMicroelectronics STB23NM60ND

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RS Stock No.:: 761-0667
Mfr. Part No.:: STB23NM60ND
Brand:: STMicroelectronics

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	N
	Maximum Continuous Drain Current	19.5 A
	Maximum Drain Source Voltage	600 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	180 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	150 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Typical Gate Charge @ Vgs	70 nC @ 10 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Length	10.75mm
	Width	10.4mm
	Series	FDmesh
	Height	4.6mm

	Select all
	Brand STMicroelectronics
	Channel Type N
	Maximum Continuous Drain Current 19.5 A
	Maximum Drain Source Voltage 600 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 180 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 150 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Typical Gate Charge @ Vgs 70 nC @ 10 V
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Length 10.75mm
	Width 10.4mm
	Series FDmesh
	Height 4.6mm

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