N-Channel MOSFET, 600 mA, 450 V, 3-Pin TO-92 STMicroelectronics STQ3N45K3-AP
- RS Stock No.:
- 761-0590
- Mfr. Part No.:
- STQ3N45K3-AP
- Brand:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$7.31
(exc. GST)
$8.04
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | $1.462 | $7.31 |
| 25 - 45 | $1.426 | $7.13 |
| 50 - 245 | $1.392 | $6.96 |
| 250 - 495 | $1.358 | $6.79 |
| 500 + | $1.326 | $6.63 |
*price indicative
- RS Stock No.:
- 761-0590
- Mfr. Part No.:
- STQ3N45K3-AP
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Voltage | 450 V | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 6 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 4.95mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.94mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Series | MDmesh K3, SuperMESH3 | |
| Height | 4.95mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 450 V | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 6 nC @ 10 V | ||
Transistor Material Si | ||
Length 4.95mm | ||
Maximum Operating Temperature +150 °C | ||
Width 3.94mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Series MDmesh K3, SuperMESH3 | ||
Height 4.95mm | ||
N-channel MDmesh™ K3 series, SuperMESH3™, STMicroelectronics
MOSFET Transistors, STMicroelectronics