STMicroelectronics STripFET N-Channel MOSFET, 280 A, 24 V, 10-Pin PowerSO STV300NH02L
- RS Stock No.:
- 761-0257P
- Mfr. Part No.:
- STV300NH02L
- Brand:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
$25.20
(exc. GST)
$27.70
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 10 - 49 | $2.52 |
| 50 - 99 | $2.15 |
| 100 - 249 | $2.12 |
| 250 + | $2.09 |
*price indicative
- RS Stock No.:
- 761-0257P
- Mfr. Part No.:
- STV300NH02L
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 280 A | |
| Maximum Drain Source Voltage | 24 V | |
| Series | STripFET | |
| Package Type | PowerSO | |
| Mounting Type | Surface Mount | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance | 1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 109 nC @ 10 V | |
| Width | 9.5mm | |
| Transistor Material | Si | |
| Length | 9.6mm | |
| Number of Elements per Chip | 1 | |
| Height | 3.75mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 280 A | ||
Maximum Drain Source Voltage 24 V | ||
Series STripFET | ||
Package Type PowerSO | ||
Mounting Type Surface Mount | ||
Pin Count 10 | ||
Maximum Drain Source Resistance 1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 109 nC @ 10 V | ||
Width 9.5mm | ||
Transistor Material Si | ||
Length 9.6mm | ||
Number of Elements per Chip 1 | ||
Height 3.75mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics