N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK STMicroelectronics STD150N3LLH6
- RS Stock No.:
- 760-9540P
- Mfr. Part No.:
- STD150N3LLH6
- Brand:
- STMicroelectronics
Subtotal 5 units (supplied on a continuous strip)*
$17.17
(exc. GST)
$18.885
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 5 + | $3.434 |
*price indicative
- RS Stock No.:
- 760-9540P
- Mfr. Part No.:
- STD150N3LLH6
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.2mm | |
| Length | 6.6mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 40 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Series | DeepGate, STripFET | |
| Height | 2.4mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.2mm | ||
Length 6.6mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 40 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Series DeepGate, STripFET | ||
Height 2.4mm | ||