Name: N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Fairchild FDD10AN06A0
Brand: Fairchild Semiconductor
SKU: 759-9049
Price: 2.87 AUD
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Fairchild Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	50 A
	Maximum Drain Source Voltage	60 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	23 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	135 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	28 nC @ 10 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	6.73mm
	Width	6.22mm
	Transistor Material	Si
	Height	2.39mm
	Minimum Operating Temperature	-55 °C
	Series	PowerTrench

	Select all
	Brand Fairchild Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 50 A
	Maximum Drain Source Voltage 60 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 23 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 135 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 28 nC @ 10 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 6.73mm
	Width 6.22mm
	Transistor Material Si
	Height 2.39mm
	Minimum Operating Temperature -55 °C
	Series PowerTrench

PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.