N-Channel MOSFET, 1.4 A, 150 V, 6-Pin SOT-23 onsemi FDC2512
- RS Stock No.:
- 759-9009
- Mfr. Part No.:
- FDC2512
- Brand:
- onsemi
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RS will no longer stock this product.
- RS Stock No.:
- 759-9009
- Mfr. Part No.:
- FDC2512
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.4 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 875 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 8 nC @ 10 V | |
| Width | 1.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 3mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Series | PowerTrench | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.4 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 875 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 8 nC @ 10 V | ||
Width 1.7mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 3mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Series PowerTrench | ||
Height 1mm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
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MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.