Infineon OptiMOS™ 3 N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON BSZ100N06LS3GATMA1
- RS Stock No.:
- 752-8255
- Mfr. Part No.:
- BSZ100N06LS3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)**
$9.56
(exc. GST)
$10.515
(inc. GST)
34850 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $60.00 ex GST
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Units | Per unit | Per Pack** |
---|---|---|
5 - 1245 | $1.912 | $9.56 |
1250 - 2495 | $1.862 | $9.31 |
2500 + | $1.838 | $9.19 |
**price indicative
- RS Stock No.:
- 752-8255
- Mfr. Part No.:
- BSZ100N06LS3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 60 V | |
Series | OptiMOS™ 3 | |
Package Type | TDSON | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 17.9 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Minimum Gate Threshold Voltage | 1.7V | |
Maximum Power Dissipation | 2.1 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 3.4mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 15 nC @ 4.5 V | |
Maximum Operating Temperature | +150 °C | |
Length | 3.4mm | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 1.1mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ 3 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.7V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.4mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.4mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
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