N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220AB Infineon IRFB4228PBF

RS Stock No.:: 688-6948
Mfr. Part No.:: IRFB4228PBF
Brand:: Infineon

N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220AB Infineon IRFB4228PBF

9 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$6.64

(exc. GST)

$7.30

(inc. GST)

Units	Per unit
1 - 12	$6.64
13 - 24	$6.63
25 +	$6.40

RS Stock No.:: 688-6948
Mfr. Part No.:: IRFB4228PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	83 A
Maximum Drain Source Voltage	150 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	330 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	72 nC @ 10 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Height	8.77mm
Minimum Operating Temperature	-40 °C