Name: N-Channel MOSFET, 17 A, 1200 V, 3-Pin TO-264 IXYS IXTK17N120L
Brand: IXYS
SKU: 686-7859
Price: 76.94 AUD
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	IXYS
	Channel Type	N
	Maximum Continuous Drain Current	17 A
	Maximum Drain Source Voltage	1200 V
	Package Type	TO-264
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	990 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Maximum Power Dissipation	700 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Number of Elements per Chip	1
	Length	19.96mm
	Width	5.13mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	270 nC @ 15 V
	Series	Linear
	Minimum Operating Temperature	-55 °C
	Height	26.16mm

	Select all
	Brand IXYS
	Channel Type N
	Maximum Continuous Drain Current 17 A
	Maximum Drain Source Voltage 1200 V
	Package Type TO-264
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 990 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Maximum Power Dissipation 700 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Number of Elements per Chip 1
	Length 19.96mm
	Width 5.13mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 270 nC @ 15 V
	Series Linear
	Minimum Operating Temperature -55 °C
	Height 26.16mm

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS