N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-220AB onsemi FQP70N10

RS Stock No.:: 671-5174
Mfr. Part No.:: FQP70N10
Brand:: onsemi

N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-220AB onsemi FQP70N10

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Price (ex. GST) Each (In a Pack of 5)

$3.266

(exc. GST)

$3.593

(inc. GST)

Units	Per unit	Per Pack*
5 - 10	$3.266	$16.33
15 - 20	$3.184	$15.92
25 +	$3.136	$15.68

*price indicative

RS Stock No.:: 671-5174
Mfr. Part No.:: FQP70N10
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	57 A
Maximum Drain Source Voltage	100 V
Series	QFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	23 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	160 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Number of Elements per Chip	1
Transistor Material	Si
Width	4.7mm
Length	10.1mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	85 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	9.4mm