N-Channel MOSFET, 6.3 A, 30 V, 3-Pin SOT-223 onsemi FDT439N
- RS Stock No.:
- 671-0781
- Mfr. Part No.:
- FDT439N
- Brand:
- onsemi
80 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 5)
$1.368
(exc. GST)
$1.505
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 995 | $1.368 | $6.84 |
| 1000 - 1995 | $1.344 | $6.72 |
| 2000 + | $1.318 | $6.59 |
| *price indicative | ||
- RS Stock No.:
- 671-0781
- Mfr. Part No.:
- FDT439N
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6.3 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 72 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Width | 3.56mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 10.7 nC @ 4.5 V |
| Length | 6.5mm |
| Transistor Material | Si |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |