onsemi FDN337N Type N-Channel MOSFET, 2.2 A, 30 V Enhancement, 3-Pin SOT-23 FDN337N

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

$7.85

(exc. GST)

$8.64

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 30 unit(s) ready to ship
  • Plus 820 unit(s) ready to ship from another location
  • Plus 10,040 unit(s) shipping from 06 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 740$0.785$7.85
750 - 1490$0.78$7.80
1500 +$0.761$7.61

*price indicative

Packaging Options:
RS Stock No.:
671-0429
Mfr. Part No.:
FDN337N
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

30V

Series

FDN337N

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

150°C

Height

0.94mm

Length

2.92mm

Width

1.4 mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-43-435

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links