onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002
- RS Stock No.:
- 671-0312
- Distrelec Article No.:
- 304-08-906
- Mfr. Part No.:
- 2N7002
- Brand:
- onsemi
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View bulk pricing optionsSubtotal (1 pack of 20 units)*
$11.04
(exc. GST)
$12.14
(inc. GST)
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In Stock
- 100 unit(s) ready to ship
- Plus 1,680 unit(s) ready to ship from another location
- Plus 340 unit(s) shipping from 18 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | $0.552 | $11.04 |
| 760 - 1480 | $0.542 | $10.84 |
| 1500 + | $0.531 | $10.62 |
*price indicative
- RS Stock No.:
- 671-0312
- Distrelec Article No.:
- 304-08-906
- Mfr. Part No.:
- 2N7002
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 200mW | |
| Typical Gate Charge Qg @ Vgs | 223nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 200mW | ||
Typical Gate Charge Qg @ Vgs 223nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
- COO (Country of Origin):
- CN
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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