onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002
- RS Stock No.:
- 671-0312
- Distrelec Article No.:
- 304-08-906
- Mfr. Part No.:
- 2N7002
- Brand:
- onsemi
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Bulk discount available
Subtotal (1 pack of 20 units)*
$9.82
(exc. GST)
$10.80
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 200 unit(s) ready to ship
- Plus 500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | $0.491 | $9.82 |
| 760 - 1480 | $0.483 | $9.66 |
| 1500 + | $0.473 | $9.46 |
*price indicative
- RS Stock No.:
- 671-0312
- Distrelec Article No.:
- 304-08-906
- Mfr. Part No.:
- 2N7002
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200mW | |
| Typical Gate Charge Qg @ Vgs | 223nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Height | 0.93mm | |
| Distrelec Product Id | 30408906 | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200mW | ||
Typical Gate Charge Qg @ Vgs 223nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Height 0.93mm | ||
Distrelec Product Id 30408906 | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
- COO (Country of Origin):
- CN
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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