N-Channel MOSFET, 94 A, 55 V, 3-Pin TO-220AB Infineon IRF1010ZPBF
- RS Stock No.:
- 650-3690
- Mfr. Part No.:
- IRF1010ZPBF
- Brand:
- Infineon
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (ex. GST) Each (In a Pack of 5)
$2.202
(exc. GST)
$2.422
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 20 | $2.202 | $11.01 |
| 25 + | $2.146 | $10.73 |
| *price indicative | ||
- RS Stock No.:
- 650-3690
- Mfr. Part No.:
- IRF1010ZPBF
- Brand:
- Infineon
Legislation and Compliance
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 94 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 4.69mm |
| Maximum Operating Temperature | +175 °C |
| Length | 10.54mm |
| Height | 8.77mm |
| Minimum Operating Temperature | -55 °C |
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