N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB Infineon IRL1004PBF

RS Stock No.:: 541-2105
Mfr. Part No.:: IRL1004PBF
Brand:: Infineon

N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB Infineon IRL1004PBF

37 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$4.26

(exc. GST)

$4.69

(inc. GST)

Units	Per unit
1 - 12	$4.26
13 - 24	$4.19
25 +	$4.11

RS Stock No.:: 541-2105
Mfr. Part No.:: IRL1004PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	130 A
Maximum Drain Source Voltage	40 V
Package Type	TO-220AB
Series	LogicFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	100 nC @ 4.5 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	8.77mm