STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 485-7816P
- Mfr. Part No.:
- STP60NF06L
- Brand:
- STMicroelectronics
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Subtotal 5 units (supplied in a tube)*
$16.54
(exc. GST)
$18.195
(inc. GST)
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In Stock
- 360 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 5 + | $3.308 |
*price indicative
- RS Stock No.:
- 485-7816P
- Mfr. Part No.:
- STP60NF06L
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET II | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 9.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET II | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 9.15mm | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.