N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1
- RS Stock No.:
- 445-2269
- Mfr. Part No.:
- BSP295H6327XTSA1
- Brand:
- Infineon
425 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 5)
$1.426
(exc. GST)
$1.569
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 245 | $1.426 | $7.13 |
| 250 - 495 | $1.416 | $7.08 |
| 500 + | $1.398 | $6.99 |
| *price indicative | ||
- RS Stock No.:
- 445-2269
- Mfr. Part No.:
- BSP295H6327XTSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon SIPMOS® N-Channel MOSFETs
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.8 A |
| Maximum Drain Source Voltage | 60 V |
| Series | SIPMOS |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 6.5mm |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 3.5mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |