SiC N-Channel MOSFET, 36 A, 1200 V, 7-Pin D2PAK Infineon IMBG120R060M1HXTMA1

RS Stock No.:: 273-2769
Mfr. Part No.:: IMBG120R060M1HXTMA1
Brand:: Infineon

SiC N-Channel MOSFET, 36 A, 1200 V, 7-Pin D2PAK Infineon IMBG120R060M1HXTMA1

Available for back order.

Price (ex. GST) Each (On a Reel of 1000)

$12.581

(exc. GST)

$13.839

(inc. GST)

Units	Per unit	Per Reel*
1000 +	$12.581	$12,581.00

*price indicative

RS Stock No.:: 273-2769
Mfr. Part No.:: IMBG120R060M1HXTMA1
Brand:: Infineon

Technical data sheets

Datasheet - IMBG120R060M1HXTMA1

Legislation and Compliance

Product Details

The Infineon MOSFET has reduction in system complexity and cost. This MOSFET has features a robust body diode for hard commutation, benchmark gate threshold voltage is 4.5V, sense pin for optimized switching performance and .XT interconnection technology for best in class thermal performance. The package creepage and clearance distance is greater than 6.1 mm.

Efficiency improvement
Cooling effort reduction
Increased power density
Very low switching losses
Enabling higher frequency
Robust against parasitic turn on

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	36 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-263
Mounting Type	Through Hole
Pin Count	7
Channel Mode	Enhancement
Transistor Material	SiC
Number of Elements per Chip	1