GaN MOSFET, 60 A, 600 V, 8-Pin HSOF Infineon IGT60R070D1ATMA4

RS Stock No.:: 273-2755
Mfr. Part No.:: IGT60R070D1ATMA4
Brand:: Infineon

GaN MOSFET, 60 A, 600 V, 8-Pin HSOF Infineon IGT60R070D1ATMA4

Available for back order.

Price (ex. GST) Each (On a Reel of 2000)

$11.727

(exc. GST)

$12.90

(inc. GST)

Units	Per unit	Per Reel*
2000 +	$11.727	$23,454.00

*price indicative

RS Stock No.:: 273-2755
Mfr. Part No.:: IGT60R070D1ATMA4
Brand:: Infineon

Technical data sheets

Datasheet - IGT60R070D1ATMA4

Legislation and Compliance

Product Details

The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.

Reduces EMI
System cost reduction savings
Capable of reverse conduction
Superior commutation ruggedness
Enables higher operating frequency
Low gate charge and low output charge

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	600 V
Package Type	HSOF
Mounting Type	Surface Mount
Pin Count	8
Channel Mode	Enhancement
Number of Elements per Chip	1
Transistor Material	GaN