Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF
- RS Stock No.:
- 257-5871
- Mfr. Part No.:
- IRFH5215TRPBF
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$18.03
(exc. GST)
$19.835
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 4,000 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | $3.606 | $18.03 |
| 50 - 95 | $3.232 | $16.16 |
| 100 - 495 | $2.61 | $13.05 |
| 500 - 1995 | $2.144 | $10.72 |
| 2000 + | $1.788 | $8.94 |
*price indicative
- RS Stock No.:
- 257-5871
- Mfr. Part No.:
- IRFH5215TRPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Width | 5 mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Width 5 mm | ||
Length 6mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Low RDSon (< 58 m)
Low thermal resistance to PCB (<12°C/W)
100% Rg tested
Low profile (<09 mm)
Industry-standard pinout
Compatible with existing surface mount techniques
RoHS compliant containing no lead, no bromide and no halogen environmentally
MSL1, industrial qualification
Related links
- Infineon HEXFET Type N-Channel MOSFET 150 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN IRFH5015TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN IRFH5053TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN IRFH5301TRPBF
