Infineon IAUT Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TO-263

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 2000 units)*

$7,062.00

(exc. GST)

$7,768.00

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2000 - 2000$3.531$7,062.00
4000 - 4000$3.446$6,892.00
6000 +$3.363$6,726.00

*price indicative

RS Stock No.:
244-0892
Mfr. Part No.:
IAUT300N08S5N014ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

IAUT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET IAUT300N08S5N014ATMA1 Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

N-channel - Enhancement mode

AEC qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Related links