Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247 IRF200P223

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

$39.14

(exc. GST)

$43.055

(inc. GST)

Add to Basket
Select or type quantity
Last RS stock
  • Final 1,030 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5$7.828$39.14
10 - 10$7.632$38.16
15 +$7.516$37.58

*price indicative

Packaging Options:
RS Stock No.:
217-2596
Distrelec Article No.:
304-31-968
Mfr. Part No.:
IRF200P223
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

313W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

55nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

34.9mm

Standards/Approvals

No

Width

5.31 mm

Length

15.87mm

Automotive Standard

No

The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability

Pb-Free ; RoHS Compliant ; Halogen-Free

Related links