Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 55 A, 30 V Enhancement, 8-Pin PDFN56 TSM080N03EPQ56

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Subtotal (1 pack of 50 units)*

$94.00

(exc. GST)

$103.50

(inc. GST)

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Being discontinued
  • Final 6,600 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
50 - 600$1.88$94.00
650 - 1200$1.835$91.75
1250 +$1.791$89.55

*price indicative

Packaging Options:
RS Stock No.:
216-9672
Mfr. Part No.:
TSM080N03EPQ56
Brand:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

30V

Series

TSM025

Package Type

PDFN56

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

7.1nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

54W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

155°C

Width

5 mm

Standards/Approvals

IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC

Length

6mm

Height

1mm

Automotive Standard

No

not founs


The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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