STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263 STB11NM80T4
- RS Stock No.:
- 188-8461
- Mfr. Part No.:
- STB11NM80T4
- Brand:
- STMicroelectronics
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Subtotal (1 pack of 2 units)*
$24.87
(exc. GST)
$27.356
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | $12.435 | $24.87 |
*price indicative
- RS Stock No.:
- 188-8461
- Mfr. Part No.:
- STB11NM80T4
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MDmesh Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STB11NM80 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43.6nC | |
| Forward Voltage Vf | 0.86V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.37mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 9.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MDmesh Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STB11NM80 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43.6nC | ||
Forward Voltage Vf 0.86V | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.37mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 9.35 mm | ||
Automotive Standard No | ||
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)Qg in the industry
Applications
Switching applications
Related links
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