Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	155 A
	Maximum Drain Source Voltage	40 V
	Package Type	DFN
	Mounting Type	Surface Mount
	Pin Count	5
	Maximum Drain Source Resistance	3.1 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	89 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Number of Elements per Chip	1
	Width	6.1mm
	Length	5.1mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	45 nC @ 10 V
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Height	1.05mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 155 A
	Maximum Drain Source Voltage 40 V
	Package Type DFN
	Mounting Type Surface Mount
	Pin Count 5
	Maximum Drain Source Resistance 3.1 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 89 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Number of Elements per Chip 1
	Width 6.1mm
	Length 5.1mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 45 nC @ 10 V
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Height 1.05mm

Datasheet NTMFS5H419NLT1G

Non Compliant

Power MOSFET 40V 150A 2.1 mΩ Single N-Channel

Low RDS(on)
Low input capacitance
Minimize conduction losses
Minimize switching losses
Applications
Point of Load Modules
High Performance DC-DC Converters
Secondary Syn. Rectification
DC Motor Drive
End Products
Netcom, Telecom
Server
Handheld power tools

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N-Channel MOSFET, 155 A, 40 V, 5-Pin DFN onsemi NTMFS5H419NLT1G