Dual N-Channel MOSFET, 70 A, 164 A, 30 V, 8-Pin PQFN 5 x 6 onsemi FDMS1D2N03DSD
- RS Stock No.:
- 185-8788P
- Mfr. Part No.:
- FDMS1D2N03DSD
- Brand:
- onsemi
Bulk discount available
Subtotal 752 units (supplied on a reel)*
$3,032.816
(exc. GST)
$3,335.872
(inc. GST)
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Units | Per unit |
|---|---|
| 752 - 1496 | $4.033 |
| 1500 + | $3.973 |
*price indicative
- RS Stock No.:
- 185-8788P
- Mfr. Part No.:
- FDMS1D2N03DSD
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A, 164 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PQFN 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5 (Q1) V, 3 (Q2) V | |
| Minimum Gate Threshold Voltage | 0.8 (Q1) V, 1 (Q2) V | |
| Maximum Power Dissipation | 26 W, 42 W | |
| Maximum Gate Source Voltage | +16/-12 (Q1, Q2) V | |
| Width | 6.15mm | |
| Length | 5.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 23 (Q1) nC @ 10 V, 84 (Q2) nC @ 10 V | |
| Height | 0.75mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A, 164 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PQFN 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5 (Q1) V, 3 (Q2) V | ||
Minimum Gate Threshold Voltage 0.8 (Q1) V, 1 (Q2) V | ||
Maximum Power Dissipation 26 W, 42 W | ||
Maximum Gate Source Voltage +16/-12 (Q1, Q2) V | ||
Width 6.15mm | ||
Length 5.1mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 23 (Q1) nC @ 10 V, 84 (Q2) nC @ 10 V | ||
Height 0.75mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Non Compliant
- COO (Country of Origin):
- PH
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Q1: Max RDS(on) = 3.25 mOhm at Vgs = 10V
Q1: Max RDS(on) = 4.0 mOhm at Vgs = 4.5V
Q2: Max RDS(on) = 0.97 mOhm at Vgs = 10V
Q2: Max RDS(on) = 1.25 mOhm at Vgs = 4.5V
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
Applications
Computing
Networking
Point of Load
End Products
VGA Cards
Telecom Power Supplies
Servers
Q1: Max RDS(on) = 4.0 mOhm at Vgs = 4.5V
Q2: Max RDS(on) = 0.97 mOhm at Vgs = 10V
Q2: Max RDS(on) = 1.25 mOhm at Vgs = 4.5V
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
Applications
Computing
Networking
Point of Load
End Products
VGA Cards
Telecom Power Supplies
Servers
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