Dual N/P-Channel-Channel MOSFET, 220 mA, 410 mA, 25 V, 6-Pin SOT-363 onsemi FDG6322C
- RS Stock No.:
- 178-7600
- Mfr. Part No.:
- FDG6322C
- Brand:
- onsemi
On back order for despatch 02/12/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 3000)
$0.23
(exc. GST)
$0.25
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | $0.23 | $690.00 |
| 6000 - 9000 | $0.224 | $672.00 |
| 12000 + | $0.221 | $663.00 |
| *price indicative | ||
- RS Stock No.:
- 178-7600
- Mfr. Part No.:
- FDG6322C
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 220 mA, 410 mA |
| Maximum Drain Source Voltage | 25 V |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 1.9 Ω, 7 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.65V |
| Maximum Power Dissipation | 300 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Typical Gate Charge @ Vgs | 0.29 nC @ 4.5 V, 1.1 nC @ 5 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 2mm |
| Number of Elements per Chip | 2 |
| Width | 1.25mm |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |