FQP27P06 P-Channel MOSFET, 27 A, 60 V QFET, 3-Pin TO-220AB ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 27 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 70 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage -25 V, +25 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 120 W
Typical Turn-On Delay Time 18 ns
Width 4.7mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 33 nC @ 10 V
Series QFET
Height 9.4mm
Typical Input Capacitance @ Vds 1100 pF @ 25 V
Maximum Operating Temperature +175 °C
Length 10.1mm
Dimensions 10.1 x 4.7 x 9.4mm
Typical Turn-Off Delay Time 30 ns
Transistor Material Si
1100 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$ 2.02
(exc. GST)
$ 2.22
(inc. GST)
units
Per unit
Per Tube*
50 +
$2.02
$101.00
*price indicative
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