P-Channel MOSFET, 100 A, 60 V, 5-Pin DFN onsemi NVMFS5A160PLZWFT1G
- RS Stock No.:
- 178-4615
- Mfr. Part No.:
- NVMFS5A160PLZWFT1G
- Brand:
- onsemi
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 178-4615
- Mfr. Part No.:
- NVMFS5A160PLZWFT1G
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 7.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.6V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 5.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
| Width | 6.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
| Height | 1.05mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 7.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.6V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5.1mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Width 6.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
Height 1.05mm | ||
- COO (Country of Origin):
- MY
ON Semiconductor MOSFET
The ON Semiconductor DFN5 surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 7.7mohm at a gate-source voltage of 10V. It has continuous drain current of 100A and maximum power dissipation of 200W. The minimum and a maximum driving voltage for this MOSFET are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Automotive power MOSFET
• Compact and efficient design
• High thermal performance
• Lead (Pb) free
• Low RDS (on) to minimize conduction losses
• Minimises driver losses
• Operating temperature ranges between -55°C and 175°C
• Wettable flank option available for enhanced optical inspection
• Compact and efficient design
• High thermal performance
• Lead (Pb) free
• Low RDS (on) to minimize conduction losses
• Minimises driver losses
• Operating temperature ranges between -55°C and 175°C
• Wettable flank option available for enhanced optical inspection
Applications
• Automotive (head light, body control)
• Load switch for automotive
• Reverse battery protection for automotive
• Load switch for automotive
• Reverse battery protection for automotive
Certifications
• AEC−Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007