N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220AB Vishay SIHP30N60E-GE3
- RS Stock No.:
- 178-0879
- Mfr. Part No.:
- SIHP30N60E-GE3
- Brand:
- Vishay
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- RS Stock No.:
- 178-0879
- Mfr. Part No.:
- SIHP30N60E-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 29 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.51mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.65mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
| Height | 15.49mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | E Series | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.51mm | ||
Number of Elements per Chip 1 | ||
Width 4.65mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Height 15.49mm | ||
Minimum Operating Temperature -55 °C | ||
Series E Series | ||