onsemi Single SiC Power Module, 28 A, 3-Pin TO-220
- RS Stock No.:
- 172-8780
- Mfr. Part No.:
- FFSP3065A
- Brand:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 172-8780
- Mfr. Part No.:
- FFSP3065A
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 28A | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Power Dissipation Pd | 240W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Length | 10.67mm | |
| Width | 4.8 mm | |
| Height | 16.51mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 28A | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Power Dissipation Pd 240W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Length 10.67mm | ||
Width 4.8 mm | ||
Height 16.51mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.
Features and Benefits
• Avalanche rated 180mJ
• Ease of paralleling
• High surge current capacity
• No reverse recovery/no forward recovery
• Operating temperature ranges between -55°C and 175°C
• Positive temperature coefficient
Applications
• EV charger
• General purpose
• Industrial power
• PFC
• Power switching circuits
• SMPS
• Solar inverter
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
Related links
- onsemi Single SiC Power Module 3-Pin TO-220 FFSP3065A
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-220 IXFP36N60X3
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-220
- onsemi SiC Power Module, 900 V F1-2PACK
- onsemi SiC Power Module, 1200 V F1-2PACK
- onsemi SiC Power Module, 1200 V F1-2PACK NXH010P120MNF1PTG
- onsemi SiC Power Module, 900 V F1-2PACK NXH010P90MNF1PTG
- onsemi Isolated Type N-Channel SiC Power Module 1200 V, 36-Pin F2 NXH006P120MNF2PTG
